Nature Communications (May 2020)
Switching of band inversion and topological surface states by charge density wave
- N. Mitsuishi,
- Y. Sugita,
- M. S. Bahramy,
- M. Kamitani,
- T. Sonobe,
- M. Sakano,
- T. Shimojima,
- H. Takahashi,
- H. Sakai,
- K. Horiba,
- H. Kumigashira,
- K. Taguchi,
- K. Miyamoto,
- T. Okuda,
- S. Ishiwata,
- Y. Motome,
- K. Ishizaka
Affiliations
- N. Mitsuishi
- Department of Applied Physics, The University of Tokyo
- Y. Sugita
- Department of Applied Physics, The University of Tokyo
- M. S. Bahramy
- Department of Applied Physics, The University of Tokyo
- M. Kamitani
- Department of Applied Physics, The University of Tokyo
- T. Sonobe
- Department of Applied Physics, The University of Tokyo
- M. Sakano
- Department of Applied Physics, The University of Tokyo
- T. Shimojima
- RIKEN Center for Emergent Matter Science (CEMS)
- H. Takahashi
- Division of Materials Physics, Graduate School of Engineering Science, Osaka University
- H. Sakai
- Department of Physics, Osaka University
- K. Horiba
- Condensed Matter Research Center and Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- H. Kumigashira
- Condensed Matter Research Center and Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- K. Taguchi
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University
- K. Miyamoto
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University
- T. Okuda
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University
- S. Ishiwata
- Division of Materials Physics, Graduate School of Engineering Science, Osaka University
- Y. Motome
- Department of Applied Physics, The University of Tokyo
- K. Ishizaka
- Department of Applied Physics, The University of Tokyo
- DOI
- https://doi.org/10.1038/s41467-020-16290-w
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 9
Abstract
Manipulating topological states by coupled electronic orders is promising for future dissipation-less electronic devices. Here, Mitsuishi et al. report selective vanishing of Dirac-type topological surface states by the formation of coupled charge density wave in a transition-metal dichalcogenide VTe2.