Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Abstract

Abstract Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial for realizing multi‐level storage devices. This work demonstrates the multi‐level storage capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. The fabricated ReRAM structures exhibit stable bipolar analog RS, non‐overlapping resistance, and endurance of ≈104 cycles, respectively, with marginal statistical variations/fluctuations. Also, the fabricated ReRAM offers highly controlled and stable retention characteristics tested up to ≈104 s with significantly controlled statistical variations/fluctuations. Adjacent thereto, it offers a substantially lower operating SET and RESET voltage of 1 and −1 V, respectively. Moreover, the non‐overlapping multiple resistive states are observed with the voltage pulse modulation schemes. Furthermore, the current switching mechanism is described using a model proposed for the conductive filament growth and the contribution of the NiO/W interface layer (IL) toward notable RS of fabricated Ag/NiO/W structures.

Keywords

• analog resistive switching
• electrochemical metallization
• memristor
• multi‐level switching
• pseudo ternary phase