A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes

Leimeng Xu; Jianhai Li; Bo Cai; Jizhong Song; Fengjuan Zhang; Tao Fang; Haibo Zeng

doi:10.1038/s41467-020-17633-3

Nature Communications (Aug 2020)

A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes

Leimeng Xu,
Jianhai Li,
Bo Cai,
Jizhong Song,
Fengjuan Zhang,
Tao Fang,
Haibo Zeng

Affiliations

Leimeng Xu: School of Materials Science and Engineering, Nanjing University of Science and Technology
Jianhai Li: School of Materials Science and Engineering, Nanjing University of Science and Technology
Bo Cai: School of Materials Science and Engineering, Nanjing University of Science and Technology
Jizhong Song: School of Materials Science and Engineering, Nanjing University of Science and Technology
Fengjuan Zhang: School of Materials Science and Engineering, Nanjing University of Science and Technology
Tao Fang: School of Materials Science and Engineering, Nanjing University of Science and Technology
Haibo Zeng: School of Materials Science and Engineering, Nanjing University of Science and Technology

DOI: https://doi.org/10.1038/s41467-020-17633-3
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 12

Abstract

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Perovskite quantum-dots are promising candidates for light-emitting diodes but the defects limit the device performance. Here Xu et al. show a passivation strategy to reduce the defect density at both interfaces, which increases the external quantum efficiency (EQE) and lifetime by more than 2-fold and 20-fold, respectively.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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