Scientific Reports (Jun 2023)

Correlation versus hybridization gap in CaMn $$_{2}$$ 2 Bi $$_{2}$$ 2

  • Christopher Lane,
  • M. M. Piva,
  • P. F. S. Rosa,
  • Jian-Xin Zhu

DOI
https://doi.org/10.1038/s41598-023-35812-2
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 8

Abstract

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Abstract We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn $$_2$$ 2 Bi $$_2$$ 2 , a candidate hybridization-gap semiconductor. By employing a DFT+U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above $$P_c=4$$ P c = 4 GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn $$_2$$ 2 Bi $$_2$$ 2 for all pressures studied.