Spin–orbit torque induced magnetization switching in the W/CoFeB/Zr/MgO multilayers with high thermal stability
Q. X. Guo,
Z. C. Zheng,
L. H. Wang,
K. Wang,
X. M. Wang,
S. Cheng,
W. He,
G. H. Yu,
H.-W. Lee,
Y. Q. Guo,
J. Teng,
T. Zhu
Affiliations
Q. X. Guo
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
Z. C. Zheng
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
L. H. Wang
Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
K. Wang
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
X. M. Wang
Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing, Beijing 100083, China
S. Cheng
Spallation Neutron Source Science Center, Dongguan 523803, China
W. He
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
G. H. Yu
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
H.-W. Lee
Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
Y. Q. Guo
Spallation Neutron Source Science Center, Dongguan 523803, China
J. Teng
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
T. Zhu
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
We demonstrate the spin–orbit torque (SOT) induced perpendicular magnetization switching in an annealed W/CoFeB/Zr/MgO multilayer with high thermal stability. It is found that the thermal stability factor can reach 79 after annealing at 540 °C. With an increase in the annealing temperature, the absolute damping-like efficiency almost keeps a high constant value (about 0.3). The tungsten in the W/CoFeB/Zr/MgO multilayer could convert from the high resistive β-W to a mediate resistive amorphous-like structure. Therefore, the absolute spin Hall conductance increases from 765 of β-W to 1420 (ℏ/e)(Ω cm)−1 of the amorphous-like tungsten. These results pave a realistic way for the practical application of tungsten in the SOT-based spintronics devices with high thermal stability and SOT efficiency.
