Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
Nazek El-Atab,
Samar Alqatari,
Feyza B. Oruc,
Tewfic Souier,
Matteo Chiesa,
Ali K. Okyay,
Ammar Nayfeh
Affiliations
Nazek El-Atab
Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Samar Alqatari
Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Feyza B. Oruc
Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Tewfic Souier
Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Matteo Chiesa
Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Ali K. Okyay
Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Ammar Nayfeh
Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.
