Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
Y. J. Ma,
Y. G. Zhang,
Y. Gu,
S. P. Xi,
X. Y. Chen,
Baolai Liang,
Bor-Chau Juang,
Diana L. Huffaker,
B. Du,
X. M. Shao,
J. X. Fang
Affiliations
Y. J. Ma
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. G. Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. Gu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
S. P. Xi
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
X. Y. Chen
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Baolai Liang
Department of Electrical Engineering, University of California, Los Angeles, CA 90095, U.S.A.
Bor-Chau Juang
Department of Electrical Engineering, University of California, Los Angeles, CA 90095, U.S.A.
Diana L. Huffaker
Department of Electrical Engineering, University of California, Los Angeles, CA 90095, U.S.A.
B. Du
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
X. M. Shao
Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
J. X. Fang
Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.
