Corrections to &#x201C;Demonstration of Trench Isolated Monolithic GaN &#x00B5;LED Displays Enabled by Photoresist Planarization&#x201D;

Corrections to “Demonstration of Trench Isolated Monolithic GaN µLED Displays Enabled by Photoresist Planarization”

Affiliations

Bryan Melanson: ORCiD; Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA
Matthew Seitz: ORCiD; Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA
Matthew Hartensveld: ORCiD; Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA
Jing Zhang: ORCiD; Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

Presents corrections to the article “Demonstration of Trench Isolated Monolithic GaN µLED Displays Enabled by Photoresist Planarization”.

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994