Enhanced Electroluminescence From Si Quantum Dots-Based Light-Emitting Devices With Si Nanowire Structures and Hydrogen Passivation

Y. Y. Zhai; Y. Q. Cao; Z. W. Lin; M. Q. Qian; J. Xu; W. Li; L. Xu; K. J. Chen

doi:10.1109/JPHOT.2016.2600373

IEEE Photonics Journal (Jan 2016)

Enhanced Electroluminescence From Si Quantum Dots-Based Light-Emitting Devices With Si Nanowire Structures and Hydrogen Passivation

Y. Y. Zhai,
Y. Q. Cao,
Z. W. Lin,
M. Q. Qian,
J. Xu,
W. Li,
L. Xu,
K. J. Chen

Affiliations

Y. Y. Zhai: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Y. Q. Cao: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Z. W. Lin: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
M. Q. Qian: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
J. Xu: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
W. Li: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
L. Xu: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
K. J. Chen: National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2016.2600373
Journal volume & issue: Vol. 8, no. 5
pp. 1 – 8

Abstract

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Enhanced electroluminescence (EL) has been achieved from the light-emitting devices containing Si quantum dots/SiO2 multilayers deposited on Si nanowire arrays because of the good antireflection characteristics of Si nanowire structures, which improves the light extraction efficiency. However, it is found that the EL is first enhanced with increasing the depth of the Si nanowires and then reduced to further increase the depth, though it exhibits the lowest reflectance (~3%), which may be due to the increased surface defect states after long time etching, as revealed by electron spin resonance measurements. It is demonstrated that the posthydrogen plasma annealing treatments can passivate the surface defect states which, in turn, improve device performance. The best device shows the turn-on voltage as low as 3.5 V, and the EL intensity of devices on Si nanowire arrays is enhanced 16-fold, compared with that of flat one.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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