(INVITED)Scattering of hot charge carriers in solid solutions of dielectric crystals with substitutional disorder

Abstract

The spatial distribution of the components that make up the substitutional solid solution is non-uniform. The randomness of substitution leads to the formation of a random potential acting on secondary electrons in the conduction band and holes in the valence band. The random potential is one of the factors that significantly affect the migration, localization, and recombination of a given charge carriers. The influence of another factor, the energy structure of the conduction band, was considered for a substitutional solid solution of the AxB1−xC type in the model of multiple parabolic branches of the electron dispersion law. The transport mean free paths for the cases of elastic scattering of electrons by potential fluctuations and inelastic scattering of electrons by LA and LO phonons were calculated. It was shown that the presence of several parabolic branches of the electron dispersion law in the conduction band in all cases leads to a significant reduction in transport mean free paths compared to the model of one parabolic branch of the electron dispersion law in the conduction band.

Keywords

• Substitutional solid solutions
• Potential fluctuations
• Phonon scattering