Topological insulator Bi2Se3 for highly sensitive, selective and anti-humidity gas sensors
Bingsheng Du,
Wei Kang,
Yong He,
Yan Wang,
Xi Yang,
Gang Meng,
Zetao Zhu,
Xiaohui Lin,
Yiling Tan,
Chengyao Liang,
Xuezheng Guo,
Jikang Jian,
Yongcai Guo,
Miao Zhou
Affiliations
Bingsheng Du
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Wei Kang
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Yong He
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; Corresponding author
Yan Wang
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Xi Yang
Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Gang Meng
Key Laboratory of Photovoltaic and Energy Conservation Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
Zetao Zhu
Department of Biomolecular Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Xiaohui Lin
Shandong Key Laboratory of Biophysics, Institute of Biophysics, Dezhou University, Dezhou 253023, China
Yiling Tan
Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Chengyao Liang
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Xuezheng Guo
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China
Jikang Jian
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Yongcai Guo
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Miao Zhou
Key Laboratory of Optoelectronic Technology & System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China; Corresponding author
Summary: Chemiresistive gas sensors generally surfer from low selectivity, inferior anti-humidity, low response signal or signal-to-noise ratio, severely limiting the precise detection of chemical agents. Herein, we exploit high-performance gas sensors based on topological insulator Bi2Se3 that is distinguished from conventional materials by robust metallic surface states protected by time-reversal symmetry. In the presence of Se vacancies, Bi2Se3 nanosheets exhibit excellent gas sensing capability toward NO2, with a high response of 93% for 50 ppm and an ultralow theoretical limit of detection concentration about 0.06 ppb at room temperature. Remarkably, Bi2Se3 demonstrates ultrahigh anti-humidity interference characteristics, as the response with standard deviation of only 3.63% can be achieved in relative humidity range of 0–80%. These findings are supported by first-principles calculations, with analyses on adsorption energy and charge transfer directly revealing the anti-humidity and selectivity. This work may pave the way for implementation of exotic quantum states for intelligent applications.
