Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

Abstract

In this study, chromium (Cr)-doped nickel oxide (NiO) thin films were deposited by employing selective lateral doping of Cr in NiO by radio-frequency magnetron sputtering at different doping times ranging from 0 s (undoped) to 80 s. The structural, optical, and electrical properties of the resulting Cr-doped NiO thin films were investigated. Structural investigation from XRD patterns indicated that the grown Cr-doped NiO layer crystallized in a cubic phase. Broadening of the diffraction peak with increasing doping time from 0 s to 80 s led to a reduction in the crystallite size that varied from 23.52 nm to 14.65 nm. Compared with the undoped NiO, the diffraction peak along the (200) plane shifted from left to right as a function of doping time. This result indicated that Cr+3 could easily enter the NiO lattice. Results from the Hall-effect study disclosed that electrical properties of Cr-doped NiO was highly dependent on doping time. The conductivity of NiO was increased with doping time, and the highest conductivity (8.73 × 10−2 Scm−1) was achieved at a doping time of 80 s. Finally, optical investigations revealed that as doping time increased, the optical bandgap of Cr-doped NiO films dropped from 3.43 eV to 3.28 eV. The highest Urbach energy at higher doping time indicated that crystallinity became poorer, and the degree of defects increased with increasing doping time.

Keywords

• RF magnetron sputtering
• selective lateral doping
• NiO
• thin film
• doping time
• microstructural defect