Applied Physics Express (Jan 2024)
Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
- Takashi Ishida,
- Takashi Ushijima,
- Shosuke Nakabayashi,
- Kozo Kato,
- Takayuki Koyama,
- Yoshitaka Nagasato,
- Junji Ohara,
- Shinichi Hoshi,
- Masatake Nagaya,
- Kazukuni Hara,
- Takashi Kanemura,
- Masato Taki,
- Toshiki Yui,
- Keisuke Hara,
- Daisuke Kawaguchi,
- Koji Kuno,
- Tetsuya Osajima,
- Jun Kojima,
- Tsutomu Uesugi,
- Atsushi Tanaka,
- Chiaki Sasaoka,
- Shoichi Onda,
- Jun Suda
Affiliations
- Takashi Ishida
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Takashi Ushijima
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Shosuke Nakabayashi
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Kozo Kato
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Takayuki Koyama
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Yoshitaka Nagasato
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan; Nagoya University , Nagoya, Aichi 464-8601, Japan
- Junji Ohara
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Shinichi Hoshi
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Masatake Nagaya
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Kazukuni Hara
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Takashi Kanemura
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Masato Taki
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan
- Toshiki Yui
- Hamamatsu Photonics, Iwata, Shizuoka 438‑0193, Japan
- Keisuke Hara
- Hamamatsu Photonics, Iwata, Shizuoka 438‑0193, Japan
- Daisuke Kawaguchi
- Hamamatsu Photonics, Iwata, Shizuoka 438‑0193, Japan
- Koji Kuno
- Hamamatsu Photonics, Iwata, Shizuoka 438‑0193, Japan
- Tetsuya Osajima
- Hamamatsu Photonics, Iwata, Shizuoka 438‑0193, Japan
- Jun Kojima
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan; Nagoya University , Nagoya, Aichi 464-8601, Japan
- Tsutomu Uesugi
- Nagoya University , Nagoya, Aichi 464-8601, Japan
- Atsushi Tanaka
- Nagoya University , Nagoya, Aichi 464-8601, Japan
- Chiaki Sasaoka
- Nagoya University , Nagoya, Aichi 464-8601, Japan
- Shoichi Onda
- MIRISE Technologies, Toyota, Aichi 470-0309, Japan; Nagoya University , Nagoya, Aichi 464-8601, Japan
- Jun Suda
- Nagoya University , Nagoya, Aichi 464-8601, Japan
- DOI
- https://doi.org/10.35848/1882-0786/ad269d
- Journal volume & issue
-
Vol. 17,
no. 2
p. 026501
Abstract
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which represent the main components of vertical power devices, exhibited no degradation either before and after laser slicing or due to the overall GaN substrate recycling process. This result indicates that the proposed recycling process is an effective method for reducing the cost of GaN substrates and has the potential to encourage the popularization of GaN vertical power devices.
Keywords