Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals

Puxian Xiong; Yuanyuan Li; Mingying Peng

iScience (Oct 2020)

Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals

Puxian Xiong,
Yuanyuan Li,
Mingying Peng

Affiliations

Puxian Xiong: The China-Germany Research Center for Photonic Materials and Device, The State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, The School of Physics and The School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
Yuanyuan Li: The China-Germany Research Center for Photonic Materials and Device, The State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, The School of Physics and The School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
Mingying Peng: The China-Germany Research Center for Photonic Materials and Device, The State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, The School of Physics and The School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China; Corresponding author

Journal volume & issue: Vol. 23, no. 10
p. 101578

Abstract

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Summary: Bismuth (Bi)-doped materials are capable of exhibiting broadband near-infrared (NIR) luminescence in 1,000–1,700 nm; driven by the potential use in lasers and broadband optical amplifiers for modern fiber communication systems, Bi-activated NIR luminescencent glasses and related devices have attracted much attention. Compared with glass systems, Bi-doped crystals as gain media usually have more regular crystal structures to produce stronger NIR signals, and developing such materials is highly desirable. Regarding the recent advances in Bi-doped NIR crystals, here, for the first time, we summarized such crystals listed as two main categories of halogen and oxide compounds. Then, by comparing the substitution site, coordination environment, emission and excitation luminescence peaks, emitting center species, and decay times of these known Bibased NIR crystals, discussion on how to design Bi-doped NIR crystals is included. Finally, the key challenges and perspectives of Bi-doped NIR crystals are also presented. It is hoped that this review could offer inspiration for the further development of Bi-doped NIR luminescent crystals and exploit its potential applications.

Published in iScience

ISSN: 2589-0042 (Online)
Publisher: Elsevier
Country of publisher: United States
LCC subjects: Science
Website: http://www.cell.com/iscience/home

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