Nature Communications (Nov 2017)

Low-threshold optically pumped lasing in highly strained germanium nanowires

  • Shuyu Bao,
  • Daeik Kim,
  • Chibuzo Onwukaeme,
  • Shashank Gupta,
  • Krishna Saraswat,
  • Kwang Hong Lee,
  • Yeji Kim,
  • Dabin Min,
  • Yongduck Jung,
  • Haodong Qiu,
  • Hong Wang,
  • Eugene A. Fitzgerald,
  • Chuan Seng Tan,
  • Donguk Nam

DOI
https://doi.org/10.1038/s41467-017-02026-w
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 7

Abstract

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Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.