High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas
Zhen Huang,
Wei Yan,
Zhaofeng Li,
Hui Dong,
Fuhua Yang,
Xiaodong Wang
Affiliations
Zhen Huang
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Wei Yan
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Zhaofeng Li
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Hui Dong
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fuhua Yang
Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xiaodong Wang
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
In this study, we fabricated three kinds of terahertz detectors with different leakage currents to analyze the plateau-like effect. The results indicate that the platform becomes increasingly apparent with the decrease in the leakage current. The fabricated device with the lowest leakage current shows a responsivity of 4.9 kV/W and noise equivalent power (NEP) of 72 pW/Hz. Further, it can be used for broadband detection between 215 GHz and 232 GHz with a voltage responsivity of more than 3.4 kV/W, and the response time can be up to 8 ns. Overall, the proposed device exhibits high sensitivity, large modulation frequency, and fast response, which indicates its excellent potential for detection and imaging applications in the THz range, including the detection of the 220 GHz atmospheric window.
