AIP Advances (Apr 2014)

Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

  • H. Y. Jia,
  • X. F. Dai,
  • L. Y. Wang,
  • R. Liu,
  • X. T. Wang,
  • P. P. Li,
  • Y. T. Cui,
  • G. D. Liu

DOI
https://doi.org/10.1063/1.4871403
Journal volume & issue
Vol. 4, no. 4
pp. 047113 – 047113-6

Abstract

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Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.