Effect of high-temperature post-deposition annealing on cesium lead bromide thin films deposited by vacuum evaporation

Ayuki Murata; Tatsuya Nishimura; Hirofumi Shimizu; Yuta Shiratori; Takuya Kato; Ryousuke Ishikawa; Shinsuke Miyajima

doi:10.1063/1.5139553

AIP Advances (Apr 2020)

Effect of high-temperature post-deposition annealing on cesium lead bromide thin films deposited by vacuum evaporation

Ayuki Murata,
Tatsuya Nishimura,
Hirofumi Shimizu,
Yuta Shiratori,
Takuya Kato,
Ryousuke Ishikawa,
Shinsuke Miyajima

Affiliations

Ayuki Murata: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
Tatsuya Nishimura: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
Hirofumi Shimizu: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
Yuta Shiratori: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan
Takuya Kato: Department of Materials Science and Technology, Niigata University, Niigata 950-2181, Japan
Ryousuke Ishikawa: Advanced Research Laboratory, Tokyo City University, Tokyo 158-0082, Japan
Shinsuke Miyajima: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan

DOI: https://doi.org/10.1063/1.5139553
Journal volume & issue: Vol. 10, no. 4
pp. 045031 – 045031-5

Abstract

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The effects of high-temperature (500 °C) post-deposition annealing (PDA) on the properties of cesium lead bromide (CsPbBr3) films deposited by vacuum evaporation were studied. The PDA effectively improved the grain size of the CsPbBr3 films. This improvement of the grain size leads to the improvement of carrier diffusion length from 0.1 µm to 0.5 μm. A CsPbBr3 solar cell fabricated using a CsPbBr3 layer with PDA at 500 °C for 60 min showed a conversion efficiency of 6.62% (VOC = 1.465 V, JSC = 6.57 mA/cm2, and FF = 0.688). Our CsPbB3 solar cell also showed a conversion efficiency of 22.5% (VOC = 1.502 V, JSC = 53.7 mA/cm2, and FF = 0.574) for blue LED light (peak wavelength of 453 nm) with an intensity of 206 mW/cm2.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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