Dielectric and photovoltaic properties of heterostructure SiC / Si

Abstract

The paper presents the results of a study of dielectric and photovoltaic properties of heterostructures SiC / Si with different conductivity type of silicon substrates. The stationary photovoltaic responses of the structures were observed under electromagnetic radiation in the wavelength range from 400 — 980 nm. It is shown that the phase of photovoltaic responses depends on the capacitance jump in C — V characteristics. Possible mechanisms of the photovoltaic phenomena in heterostructures SiC / Si are discussed.

Keywords

• SiC / Si heterostructures
• dilatation dipole
• nanosized silicon carbide
• photovoltaic response