Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

W. Lu; J. X. Lu; X. Ou; X. J. Liu; Y. Q. Cao; A. D. Li; B. Xu; Y. D. Xia; J. Yin; Z. G. Liu

doi:10.1063/1.4892857

AIP Advances (Aug 2014)

Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

W. Lu,
J. X. Lu,
X. Ou,
X. J. Liu,
Y. Q. Cao,
A. D. Li,
B. Xu,
Y. D. Xia,
J. Yin,
Z. G. Liu

Affiliations

W. Lu: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
J. X. Lu: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
X. Ou: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
X. J. Liu: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Y. Q. Cao: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
A. D. Li: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
B. Xu: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Y. D. Xia: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
J. Yin: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Z. G. Liu: National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

DOI: https://doi.org/10.1063/1.4892857
Journal volume & issue: Vol. 4, no. 8
pp. 087114 – 087114-8

Abstract

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A memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf0.5Zr0.5O2 high-k film was estimated as 6.63 × 1012 cm−2, indicating a body defect density of larger than 2.21 × 1019 cm−3. It is observed that the post-annealing in N2 can reduces the defect density in Hf0.5Zr0.5O2 film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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