Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode
Wanqiang Fu,
Qizhen Chen,
Peng Gao,
Linqin Jiang,
Yu Qiu,
Dong-Sing Wuu,
Ray-Hua Horng,
Shui-Yang Lien
Affiliations
Wanqiang Fu
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Qizhen Chen
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Peng Gao
CAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
Linqin Jiang
Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China
Yu Qiu
Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China
Dong-Sing Wuu
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan
Ray-Hua Horng
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Shui-Yang Lien
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 × 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.
