Landau level spin diode in a GaAs two dimensional hole system

O Klochan; A R Hamilton; K das Gupta; F Sfigakis; H E Beere; D A Ritchie

doi:10.1088/1367-2630/17/3/033035

New Journal of Physics (Jan 2015)

Landau level spin diode in a GaAs two dimensional hole system

O Klochan,
A R Hamilton,
K das Gupta,
F Sfigakis,
H E Beere,
D A Ritchie

Affiliations

O Klochan: School of Physics, University Of New South Wales, Sydney NSW 2052, Australia
A R Hamilton: School of Physics, University Of New South Wales, Sydney NSW 2052, Australia
K das Gupta: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE , UK; Department of Physics, IIT Bombay, Mumbai 400076 , India
F Sfigakis: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE , UK
H E Beere: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE , UK
D A Ritchie: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE , UK

DOI: https://doi.org/10.1088/1367-2630/17/3/033035
Journal volume & issue: Vol. 17, no. 3
p. 033035

Abstract

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We have fabricated and characterized a Landau level spin diode in a GaAs two-dimensional hole system. We used the spin diode to probe the hyperfine coupling between hole and nuclear spins and found no detectable net nuclear spin polarization, indicating that hole–nuclear spin flip-flop processes are suppressed by at least factor of 50 compared to GaAs electron systems.

Published in New Journal of Physics

ISSN: 1367-2630 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1367-2630

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