An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Fan Zhang; Jose F. Castaneda; Timothy H. Gfroerer; Daniel Friedman; Yong-Hang Zhang; Mark W. Wanlass; Yong Zhang

doi:10.1038/s41377-022-00833-5

Light: Science & Applications (May 2022)

An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Fan Zhang,
Jose F. Castaneda,
Timothy H. Gfroerer,
Daniel Friedman,
Yong-Hang Zhang,
Mark W. Wanlass,
Yong Zhang

Affiliations

Fan Zhang: Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte
Jose F. Castaneda: Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte
Timothy H. Gfroerer: Department of Physics, Davidson College
Daniel Friedman: National Renewable Energy Laboratory
Yong-Hang Zhang: School of Electrical, Computer and Energy Engineering, Arizona State University
Mark W. Wanlass: Wanlass Consulting
Yong Zhang: Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte

DOI: https://doi.org/10.1038/s41377-022-00833-5
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 12

Abstract

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A measurement of PL intensity vs. excitation density, with the help of Raman, is shown capable of determine nearly all pertinent parameters of radiative and nonradiative recombination in a semiconductor.

Published in Light: Science & Applications

ISSN: 2047-7538 (Online)
Publisher: Nature Publishing Group
Country of publisher: United Kingdom
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: https://www.nature.com/lsa/

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