Strain-engineered growth of two-dimensional materials

Geun Ho Ahn; Matin Amani; Haider Rasool; Der-Hsien Lien; James P. Mastandrea; Joel W. Ager III; Madan Dubey; Daryl C. Chrzan; Andrew M. Minor; Ali Javey

doi:10.1038/s41467-017-00516-5

Nature Communications (Sep 2017)

Strain-engineered growth of two-dimensional materials

Geun Ho Ahn,
Matin Amani,
Haider Rasool,
Der-Hsien Lien,
James P. Mastandrea,
Joel W. Ager III,
Madan Dubey,
Daryl C. Chrzan,
Andrew M. Minor,
Ali Javey

Affiliations

Geun Ho Ahn: Electrical Engineering and Computer Sciences, University of California at Berkeley
Matin Amani: Electrical Engineering and Computer Sciences, University of California at Berkeley
Haider Rasool: Materials Sciences Division, Lawrence Berkeley National Laboratory
Der-Hsien Lien: Electrical Engineering and Computer Sciences, University of California at Berkeley
James P. Mastandrea: Materials Sciences Division, Lawrence Berkeley National Laboratory
Joel W. Ager III: Materials Sciences Division, Lawrence Berkeley National Laboratory
Madan Dubey: US Army Research Laboratory
Daryl C. Chrzan: Materials Sciences Division, Lawrence Berkeley National Laboratory
Andrew M. Minor: Materials Sciences Division, Lawrence Berkeley National Laboratory
Ali Javey: Electrical Engineering and Computer Sciences, University of California at Berkeley

DOI: https://doi.org/10.1038/s41467-017-00516-5
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 8

Abstract

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Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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