Monolithically Integrated Tunable Three- Section All-Active DBR Laser Diodes With 30 nm Tuning Range

Abstract

We present a monolithically integrated three-section all-active AlGaInAs/InP tunable distributed Bragg reflector (DBR) ridge waveguide laser diode that uses thermal tuning mechanism and mode-hopping tuning principle to achieve wide-range wavelength tuning. It is similar to the traditional three-section DBR laser structure, including a gain section, a phase section, and a DBR grating section. The difference is that the phase section and the DBR section incorporate the same active quantum well structure as the gain section. In this case, weak effective refractive index changes of the three active sections affected by the current injection will occur since the carrier density is clamped by the threshold gain condition of the DBR laser diode. Despite this limitation, a noncontinuous tuning up to ∼30 nm (1564–1594 nm) can be observed using only current injection at a constant temperature of 25 °C. Significant thermal effects occurred during the tuning process. In addition, a discontinuity is introduced in the tuning because it does not contain a passive region for phase adjustment. However, the device still provides a stable single longitudinal mode output with nine channels, a wavelength spacing of about 4 nm, and a side mode suppression ratio (SMSR) of more than 30 dB. Furthermore, the DBR laser diode can be easily fabricated utilizing the conventional distributed feedback laser diode fabrication process without secondary epitaxy and heater metal. The all-active DBR laser diode will be expected to be applied in the coarse wavelength division multiplexing (CWDM) systems with the advantage of low cost.

Keywords

• Semiconductor lasers
• laser tuning
• tunable semiconductor lasers
• thermal tuning