Open Ceramics (Mar 2024)
High-temperature variable range hopping conduction and dielectric relaxation in CoFe2O4 ceramic
Abstract
CoFe2O4 ceramic was fabricated using a sol-gel auto-combustion process. The cubic spinel structure with F d −3 m space group symmetry was confirmed through the Rietveld refinement of the XRD pattern of CoFe2O4 sintered at 800 °C for 4 h. The cobalt vacancies at the tetrahedral site were verified by electron density distribution calculated through the maximum entropy method. The impedance spectroscopy study revealed that the grain boundary was dominant compared to the grain in the electrical properties of CoFe2O4. The total dc resistivity was fitted by the variable range hopping (VRH) model, demonstrating that the charge carriers for conduction mechanism confirm to the VRH model. The density of localized states (N(EF)) near the Fermi level was found to be 1.07 × 1019 eV−1-cm−3. The hopping energy (EH) and hopping length (R) of the charge carriers were estimated to be 0.29 eV and 2.28 nm, respectively, at 473 K.