Polishing of CdTe, Cd(Zn)Te, Cd(Mn)Te Single Crystals by Iodine in Dimethylformamide

Abstract

The process of chemical-mechanical polishing of CdTe, Cd0,9Zn0,1Te and Cd0.95Mn0.05Te surface by etchants, based on solutions of the I2-dimethylformamide system, has been studied. Ethylene glycol and lactic acid were used as modifying components. The dependences of chemical-mechanical polishing rates on the content of ethylene glycol and lactic acid in the composition of the basic solution have been studied. The technological stability of the developed etchants has been determined. Qualitative characteristics of the surface are established by atomic force microscopy and non-contact profilographic analysis. Based on the obtained results, the compositions of etching solutions and technological modes of chemical-mechanical treatment of CdTe, Cd0,9Zn0,1Te and Cd0.95Mn0.05Te single crystals were optimized. Etchants modified with an organic component are promising for use in the semiconductor materials technology in the case when the main goal is to obtain high-quality, clean from contaminants and impurities, structurally perfect surface.

Keywords

• cdte solid solutions
• single crystal
• etching rate
• chemical-mechanical polishing
• dimethylformamide
• iodine