Free radical sensors based on inner-cutting graphene field-effect transistors

Zhen Wang; Kongyang Yi; Qiuyuan Lin; Lei Yang; Xiaosong Chen; Hui Chen; Yunqi Liu; Dacheng Wei

doi:10.1038/s41467-019-09573-4

Nature Communications (Apr 2019)

Free radical sensors based on inner-cutting graphene field-effect transistors

Zhen Wang,
Kongyang Yi,
Qiuyuan Lin,
Lei Yang,
Xiaosong Chen,
Hui Chen,
Yunqi Liu,
Dacheng Wei

Affiliations

Zhen Wang: State Key Laboratory of Molecular Engineering of Polymers, Fudan University
Kongyang Yi: State Key Laboratory of Molecular Engineering of Polymers, Fudan University
Qiuyuan Lin: Department of Chemistry, Fudan University
Lei Yang: State Key Laboratory of Molecular Engineering of Polymers, Fudan University
Xiaosong Chen: State Key Laboratory of Molecular Engineering of Polymers, Fudan University
Hui Chen: Department of Chemistry, Fudan University
Yunqi Liu: Institute of Molecular Materials and Devices, Fudan University
Dacheng Wei: State Key Laboratory of Molecular Engineering of Polymers, Fudan University

DOI: https://doi.org/10.1038/s41467-019-09573-4
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 10

Abstract

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Field effect transistors based on graphene hold promise for future sensing applications. Here, the authors report a free radical sensor in which the •OH radical cuts cysteamine to release Cd2 + from the electrolyte/graphene interface and selectively detects •OH with a concentration down to 10−9 M.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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