Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

Abstract

The formation of gallium nitride (GaN) thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD) peaks at angles corresponding to that of (002) and (101) reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo) holder, which is more stable against Gaamalgam formation than stainless steel.

Keywords

• gallium nitride
• GaN