Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations

Abstract

As the size of SiC crystals gradually increase, it becomes increasingly difficult to control the temperature distribution inside the crucible. In this study, numerical simulation tools were used to model the thermal field of SiC single crystal growth using the resistance heating PVT method. Through adjusting the relative position of the heater, adjusting the crucible and insulation structure, and setting up dual heaters, the temperature field distribution patterns under different conditions were obtained. The research results indicate that adjusting the relative positions of the heater, the crucible and insulation structure can achieve uniform temperature conditions under specific conditions. The use of dual heaters can achieve ideal crystal growth conditions with a growth interface temperature difference of less than 10 K, and an axial temperature gradient magnitude of about 10 K/cm, with a smaller edge axial temperature gradient, which is helpful to avoid edge polycrystalline formation and improve crystal quality. Meanwhile, combined with the top insulation layer, more energy-saving effects can be achieved, providing a reference for the preparation of large-sized SiC crystals.

Keywords

• silicon carbide
• resistance method
• large size
• uniform growth conditions
• simulation