Scientific Reports (Apr 2022)

New fabrication method for di-indium tri-sulfuric (In2S3) thin films

  • Ahmed I. Ali,
  • Medhat Ibrahim,
  • A. Hassen

DOI
https://doi.org/10.1038/s41598-022-11107-w
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 9

Abstract

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Abstract Di-indium tri-sulfuric (In2S3) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In2S3 thin films. The optimum annealing conditions of In2S3 thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In2S3 thin films to be used for different applications.