Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL

• Vasil’evskii I. S.,
• Vinichenko A.N.,
• Grekhov M.M.,
• Saraykin V.V.,
• Klochkov A.N.,
• Kargin N.I.,
• Khabibullin R.A.,
• Pushkarev S.S.

Affiliations

Vasil’evskii I. S.

National Research Nuclear University «MEPhI»

Vinichenko A.N.

National Research Nuclear University «MEPhI»

Grekhov M.M.

National Research Nuclear University «MEPhI»

Saraykin V.V.

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS

Klochkov A.N.

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS

Kargin N.I.

National Research Nuclear University «MEPhI»

Khabibullin R.A.

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS

Pushkarev S.S.

V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS