Communications Materials (Mar 2024)
Emergence of quantum confinement in topological kagome superconductor CsV3Sb5
- Yongqing Cai,
- Yuan Wang,
- Zhanyang Hao,
- Yixuan Liu,
- Xuelei Sui,
- Zuowei Liang,
- Xiao-Ming Ma,
- Fayuan Zhang,
- Zecheng Shen,
- Chengcheng Zhang,
- Zhicheng Jiang,
- Yichen Yang,
- Wanling Liu,
- Qi Jiang,
- Zhengtai Liu,
- Mao Ye,
- Dawei Shen,
- Han Gao,
- Hanbo Xiao,
- Zhongkai Liu,
- Zhe Sun,
- Yi Liu,
- Shengtao Cui,
- Jiabin Chen,
- Le Wang,
- Cai Liu,
- Junhao Lin,
- Bing Huang,
- Zhenyu Wang,
- Xianhui Chen,
- Jia-Wei Mei,
- Jianfeng Wang,
- Chaoyu Chen
Affiliations
- Yongqing Cai
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Yuan Wang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Zhanyang Hao
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Yixuan Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Xuelei Sui
- College of Mathematics and Physics, Beijing University of Chemical Technology
- Zuowei Liang
- Department of Physics and Chinese Academy of Sciences Key laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China
- Xiao-Ming Ma
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Fayuan Zhang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Zecheng Shen
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Chengcheng Zhang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Zhicheng Jiang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Yichen Yang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Wanling Liu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Qi Jiang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Zhengtai Liu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Mao Ye
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Dawei Shen
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences
- Han Gao
- School of Physical Science and Technology, ShanghaiTech University
- Hanbo Xiao
- School of Physical Science and Technology, ShanghaiTech University
- Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University
- Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China
- Yi Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China
- Shengtao Cui
- National Synchrotron Radiation Laboratory, University of Science and Technology of China
- Jiabin Chen
- Beijing Computational Science Research Center
- Le Wang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Cai Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Junhao Lin
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Bing Huang
- Beijing Computational Science Research Center
- Zhenyu Wang
- Department of Physics and Chinese Academy of Sciences Key laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China
- Xianhui Chen
- Department of Physics and Chinese Academy of Sciences Key laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China
- Jia-Wei Mei
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- Jianfeng Wang
- Beijing Computational Science Research Center
- Chaoyu Chen
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech)
- DOI
- https://doi.org/10.1038/s43246-024-00461-z
- Journal volume & issue
-
Vol. 5,
no. 1
pp. 1 – 7
Abstract
Abstract Quantum confinement is a restriction on the motion of electrons in a material to specific region, resulting in discrete energy levels rather than continuous energy bands. In certain materials, quantum confinement could dramatically reshape the electronic structure and properties of the surface with respect to the bulk. Here, in the recently discovered kagome superconductors CsV3Sb5, we unveil the dominant role of quantum confinement in determining their surface electronic structure. Combining angle-resolved photoemission spectroscopy (ARPES) measurement and density-functional theory simulation, we report the observations of two-dimensional quantum well states due to the confinement of bulk electron pocket and Dirac cone to the nearly isolated surface layer. The theoretical calculations on the slab model also suggest that the ARPES observed spectra are almost entirely contributed by the top two layers. Our results not only explain the disagreement of band structures between the recent experiments and calculations, but also suggest an equally important role played by quantum confinement, together with strong correlation and band topology, in shaping the electronic properties of this material.
