Erratum: “Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode” [AIP Adv. 8, 115011 (2018)]

• Kazuki Isobe,
• Masamichi Akazawa

Affiliations

Kazuki Isobe

Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0813, Japan

Masamichi Akazawa

Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0813, Japan