Methodology to obtain the linear range of a transistor as a control element in a DC current source

Abstract

This paper presents a methodology to develop direct current sources using BJT transistors on the linear region (active region). This region depends on the saturation voltage, maximum power and polarization voltage of the element; from these parameters it is obtained the load resistance range that ensures a constant current. The methodology is used to develop a DC current source prototype of 2A and the range of the load resistance is defined by the transistor characteristics. The temperature and power constrains are taking into account.

Keywords

• BJT transistor
• polarization voltage
• active regions
• maximum power
• loads resistance
• direct current source