Известия высших учебных заведений России: Радиоэлектроника (Feb 2016)

Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

  • A. S. Evseenkov,
  • I. A. Lamkin,
  • I. I. Mikhailov,
  • A. V. Solomonov,
  • S. A. Tarasov

Journal volume & issue
Vol. 0, no. 1
pp. 54 – 58

Abstract

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Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier transport structures Au-AlGaN. Photodiodes obtained with a half-width of the spectrum of photosensitivity 5…6 nm wavelengths 351…373 nm and a sensitivity of 140 mA/W.

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