Monolayer Mo1−x−yRexWyS2‐Based Photodetectors Grown by Chemical Vapor Deposition

Xinke Liu; Jie Zhou; Zhongwei Jiang; Zheng Huang; Bo Li; Zhengweng Ma; Yongkai Yang; Yeying Huang; Yating Zhang; V. Divakar Botcha; Ren‐Jei Chung; Jiehao Liang; Xiaohua Li; Yu Li; Wei He

doi:10.1002/aelm.202300711

Advanced Electronic Materials (Mar 2024)

Monolayer Mo1−x−yRexWyS2‐Based Photodetectors Grown by Chemical Vapor Deposition

Xinke Liu,
Jie Zhou,
Zhongwei Jiang,
Zheng Huang,
Bo Li,
Zhengweng Ma,
Yongkai Yang,
Yeying Huang,
Yating Zhang,
V. Divakar Botcha,
Ren‐Jei Chung,
Jiehao Liang,
Xiaohua Li,
Yu Li,
Wei He

Affiliations

Xinke Liu: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Jie Zhou: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Zhongwei Jiang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Zheng Huang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Bo Li: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Zhengweng Ma: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Yongkai Yang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Yeying Huang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Yating Zhang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
V. Divakar Botcha: BioSense Institute University of Novi Sad Novi Sad 21000 Serbia
Ren‐Jei Chung: Department of Chemical Engineering and Biotechnology National Taipei University of Technology (Taipei Tech) Taipei 10608 Taiwan
Jiehao Liang: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Xiaohua Li: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Yu Li: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China
Wei He: College of Materials Science and Engineering College of Electronics and Information Engineering Institute of Microelectronics (IME) Guangdong Research Center for Interfacial Engineering of Functional Materials Shenzhen University Shenzhen 518060 China

DOI: https://doi.org/10.1002/aelm.202300711
Journal volume & issue: Vol. 10, no. 3
pp. n/a – n/a

Abstract

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Abstract The utilization of alloyed 2D transition metal dichalcogenides (TMDs) has become a pivotal approach for addressing challenges in material applications. The judicious selection of dopant constituents offers a potent means to finely modulate the materials' bandgap, consequently broadening the potential applications of 2D materials. In the context of an investigation, Mo1−x−yRexWyS2 is successfully synthesized using chemical vapor deposition. With a bandgap of 1.33 eV, this material exhibits promising prospects for application in the realm of optoelectronics. This advancement enables the fabrication of the Mo1−x−yRexWyS2 photodetector. The rigorous testing and analysis of photoelectric performance reveal significant improvements in both responsivity and response speed compared to analogous detectors. This accomplishment not only furnishes a novel paradigm for the advancement of photodetectors but also contributes fresh insights to the domain of alloyed 2D TMDs.

Published in Advanced Electronic Materials

ISSN: 2199-160X (Online)
Publisher: Wiley-VCH
Country of publisher: Germany
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Science: Physics
Website: https://onlinelibrary.wiley.com/journal/2199160x

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