Electronic Structures of Graphene/MoS₂ Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance

Abstract

Effects of stacking orientation, element substitution, and interlayer distance on electronic structures of graphene/MoS2 heterostructures were investigated using first-principles calculations. The results predicted that the stacking orientation does not take a crucial role in changing the electronic structures in contrast to element substitution, which converts the system from semiconductor to metallic. A bandgap opening originating in a Dirac band of graphene is found to be governed by the interface distance between graphene and MoS2 layers.

Keywords

• graphene
• transition-metal dichalcogenide
• heterostructure
• electronic structure
• first-principles calculations