Electrical properties of CdTe<Ca> thin layers

Abstract

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

Keywords

• кадмій телурид, провідність
• концентрація
• точкові дефекти