Performance Degradations of MISFET-Based Hydrogen Sensors with Pd-Ta₂O₅-SiO₂-Si Structure at Long-Time Operation

Abstract

There are presented the generalized results of studies of performance degradation of hydrogen sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si. It was shown how responses’ parameters change during long-term tests of sensors under repeated hydrogen impacts. There were found two stages of time-dependence response’ instability, the degradation degree of which depends on operating conditions, hydrogen concentrations and time. To interpret results there were proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based devices for long-time operation.

Keywords

• hydrogen sensors
• MISFET
• Pd-Ta₂O₅-SiO₂-Si
• responses’ parameters
• hydrogen concentrations
• time-dependence response’ instability