Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range
Rubén Martínez-Revuelta,
Horacio I. Solís-Cisneros,
Raúl Trejo-Hernández,
Madaín Pérez-Patricio,
Martha L. Paniagua-Chávez,
Rubén Grajales-Coutiño,
Jorge L. Camas-Anzueto,
Carlos A. Hernández-Gutiérrez
Affiliations
Rubén Martínez-Revuelta
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Horacio I. Solís-Cisneros
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Raúl Trejo-Hernández
Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional 2508, Ciudad de México 07360, Mexico
Madaín Pérez-Patricio
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Martha L. Paniagua-Chávez
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Rubén Grajales-Coutiño
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Jorge L. Camas-Anzueto
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
Carlos A. Hernández-Gutiérrez
Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, Carretera Panamericana Km 1080, Tuxtla Gutiérrez 29050, Mexico
A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s.
