Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> Substrate Using Electron Beam Irradiation
Evgeny V. Emelin,
Hak Dong Cho,
Vitaly I. Korepanov,
Liubov A. Varlamova,
Darya O. Klimchuk,
Sergey V. Erohin,
Konstantin V. Larionov,
Deuk Young Kim,
Pavel B. Sorokin,
Gennady N. Panin
Affiliations
Evgeny V. Emelin
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia
Hak Dong Cho
Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
Vitaly I. Korepanov
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia
Liubov A. Varlamova
Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
Darya O. Klimchuk
Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
Sergey V. Erohin
Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
Konstantin V. Larionov
Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
Deuk Young Kim
Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
Pavel B. Sorokin
Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
Gennady N. Panin
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia
Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migration of hydrogen ions and/or oxygen-related groups located on one or both sides of the nanostructure can occur. This process leads to the disruption of sp3 carbon bonds, restoring the high conductivity of bigraphene.
