Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

J. Park; Y. Ahn; J. A. Tilka; K. C. Sampson; D. E. Savage; J. R. Prance; C. B. Simmons; M. G. Lagally; S. N. Coppersmith; M. A. Eriksson; M. V. Holt; P. G. Evans

doi:10.1063/1.4954054

APL Materials (Jun 2016)

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

J. Park,
Y. Ahn,
J. A. Tilka,
K. C. Sampson,
D. E. Savage,
J. R. Prance,
C. B. Simmons,
M. G. Lagally,
S. N. Coppersmith,
M. A. Eriksson,
M. V. Holt,
P. G. Evans

Affiliations

J. Park: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Y. Ahn: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
J. A. Tilka: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
K. C. Sampson: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
D. E. Savage: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
J. R. Prance: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
C. B. Simmons: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
M. G. Lagally: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
S. N. Coppersmith: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
M. A. Eriksson: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
M. V. Holt: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
P. G. Evans: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

DOI: https://doi.org/10.1063/1.4954054
Journal volume & issue: Vol. 4, no. 6
pp. 066102 – 066102-9

Abstract

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Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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