Probing an enhanced anisotropy Seebeck coefficient and low thermal conductivity in polycrystalline Al doped SnSe nanostructure

S. Athithya; K. P. Mohamed Jibri; S. Harish; K. Hayakawa; Y. Kubota; H. Ikeda; Y. Hayakawa; M. Navaneethan; J. Archana

doi:10.1063/5.0134959

AIP Advances (Jan 2023)

Probing an enhanced anisotropy Seebeck coefficient and low thermal conductivity in polycrystalline Al doped SnSe nanostructure

S. Athithya,
K. P. Mohamed Jibri,
S. Harish,
K. Hayakawa,
Y. Kubota,
H. Ikeda,
Y. Hayakawa,
M. Navaneethan,
J. Archana

Affiliations

S. Athithya: Graduate School of Science and Technology (GSST), Shizuoka University, 3-Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan
K. P. Mohamed Jibri: Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, Chennai, India
S. Harish: Graduate School of Science and Technology (GSST), Shizuoka University, 3-Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan
K. Hayakawa: Graduate School of Science and Technology (GSST), Shizuoka University, 3-Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan
Y. Kubota: Department of Mechanical Engineering, Shizuoka University, 3-Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan
H. Ikeda: Graduate School of Science and Technology (GSST), Shizuoka University, 3-Johoku, Naka-Ku, Hamamatsu, Shizuoka 432-8011, Japan
Y. Hayakawa: Research Institute of Electronics (RIE), Shizuoka University, 3-5-1 Johoku, Naka Ku, Hamamatsu, Shizuoka 432-8011, Japan
M. Navaneethan: Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, Chennai, India
J. Archana: Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, Chennai, India

DOI: https://doi.org/10.1063/5.0134959
Journal volume & issue: Vol. 13, no. 1
pp. 015311 – 015311-12

Abstract

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Recently, SnSe based thermoelectric materials attained much interest due to their environment friendly IV–VI semiconductor group. Herein, Al doped SnSe (Sn1−xAlxSe) specimens were prepared by combined ball milling and spark plasma sintering. High resolution transmission electron microscopy analysis of (Sn1−xAlxSe) nanostructure samples confirmed the existence of different crystal defects and dislocation induced by Al doping. Lower thermal conductivity (0.63 W/mK at 750 K) is observed for Sno.92Al0.08Se samples than pristine SnSe (1.14 W/mK at 750 K), which is mainly attributed to various crystal defects, such as lattice dislocation, stacking fault, grain boundary scattering, and excellent anharmonic bonding nature of SnSe. The maximum electrical conductivity is observed for the SAS-2 sample, which correlates well with the low activation energy of 0.20 eV. The minimal doping of Al (SAS-2) decoupled the strong interdependency of electrical and thermal transport properties, leading to a maximum ZT of 0.18 at 743 K. The Al doped SnSe (Sn1−xAlxSe) induced point defects in the sample, which provides a new strategy for waste heat recovery.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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