Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

Abstract

Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

Keywords

• photovoltaic cells
• quantum dots
• indium arsenide
• gallium arsenide
• liquid phase epitaxy