Effects of sintering condition on giant dielectric and nonlinear current-voltage properties of Na1/2Y1/2Cu3Ti3.975Ta0.025O12 ceramics
Pariwat Saengvong,
Jakkree Boonlakhorn,
Jutapol Jumpatam,
Narong Chanlek,
Jariyanee Prasongkit,
Bundit Putasaeng,
Pairot Moontragoon,
Pornjuk Srepusharawoot,
Prasit Thongbai
Affiliations
Pariwat Saengvong
Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
Jakkree Boonlakhorn
Department of Basic Science and Mathematics, Faculty of Science, Thaksin University, Songkhla Campus, Songkhla, 90000, Thailand
Jutapol Jumpatam
Department of Fundamental Science, Faculty of Science and Technology, Surindra Rajabhat University, Surin, 32000, Thailand
Narong Chanlek
Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima, 30000, Thailand
Jariyanee Prasongkit
Division of Physics, Faculty of Science, Nakhon Phanom University, Nakhon Phanom, 48000, Thailand
Bundit Putasaeng
National Metal and Materials Technology Center, National Science and Technology Development Agency, Thailand Science Park, Pathum Thani, 12120, Thailand
Pairot Moontragoon
Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
Pornjuk Srepusharawoot
Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand; Corresponding author.
Prasit Thongbai
Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
The effects of sintering conditions on the microstructure, giant dielectric response, and electrical properties of Na1/2Y1/2Cu3Ti3.975Ta0.025O12 (NYCTTaO) were studied. A single phase of Na1/2Y1/2Cu3Ti4O12 and a high density (>98.5%) were obtained in the sintered NYCTTaO ceramics. First–principles calculations were used to study the structure of the NYCTTaO. Insulating grain boundaries (i–GBs) and semiconducting grains (semi–Gs) were studied at different temperatures using impedance and admittance spectroscopies. The conduction activation energies of the semi–Gs and i–GBs were Eg ≈ 0.1 and Egb ≈ 0.6 eV, respectively. A large dielectric constant (ε′ ≈ 2.43–3.89 × 104) and low loss tangent (tanδ ≈ 0.046–0.021) were achieved. When the sintering temperature was increased from 1070 to 1090 °C, the mean grain size slightly increased, while ε′ showed the opposite tendency. Furthermore, the breakdown electric field (Eb) increases significantly. As the sintering time increased from 5 to 10 h, the mean grain size did not change, whereas ε′ and Eb increased. Variations in the dielectric response and non–linear electrical properties were primarily described by the intrinsic (Egb) and extrinsic (segregation of Na–, Cu–, Ta–, and O–rich phases) properties of the i–GBs based on the internal barrier layer capacitor effect.
