Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Jun 2008)
Some photo-electric features of the characteristics two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure
Abstract
The photo-electric characteristics created two-side-sensitive two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure in photodiode and photovoltaic modes are investigated at influence by radiation from own area of absorption of base areas. The received structures are of interest as silent photoreceivers for opto- and microelectronics.