Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering
Simeon Simeonov,
Anna Szekeres,
Dencho Spassov,
Mihai Anastasescu,
Ioana Stanculescu,
Madalina Nicolescu,
Elias Aperathitis,
Mircea Modreanu,
Mariuca Gartner
Affiliations
Simeon Simeonov
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria
Anna Szekeres
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria
Dencho Spassov
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria
Mihai Anastasescu
Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania
Ioana Stanculescu
Horia Hulubei National Institute of Research and Development for Physics and Nuclear Engineering, 30 Aleea Reactorului, 077125 Magurele, Romania
Madalina Nicolescu
Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania
Elias Aperathitis
Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology (FORTH-Hellas), P.O. Box 1385, 70013 Heraklion, Crete, Greece
Mircea Modreanu
Tyndall National Institute-University College Cork, Lee Maltings, Dyke Parade, T12 R5CP Cork, Ireland
Mariuca Gartner
Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania
Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.
