High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Chao Yang; Xiaorong Luo; Tao Sun; Anbang Zhang; Dongfa Ouyang; Siyu Deng; Jie Wei; Bo Zhang

doi:10.1186/s11671-019-3025-8

Nanoscale Research Letters (Jun 2019)

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Chao Yang,
Xiaorong Luo,
Tao Sun,
Anbang Zhang,
Dongfa Ouyang,
Siyu Deng,
Jie Wei,
Bo Zhang

Affiliations

Chao Yang: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Xiaorong Luo: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Tao Sun: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Anbang Zhang: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Dongfa Ouyang: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Siyu Deng: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Jie Wei: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Bo Zhang: School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

DOI: https://doi.org/10.1186/s11671-019-3025-8
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 6

Abstract

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Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured R ON, D of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the R ON, D of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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