Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)
THE PHENOMENON OF IMPURITY SEGREGATION IN THE VICINITY OF <i>P</i>-<i>N</i>-JUNCTION
Abstract
On the basis of the microscopic diffusion mechanism due to formation, migration, and dissolution of «impurity atom-intrinsic point defect» pairs, the investigation of phenomenon of impurity segregation in the vicinity of p-n -junction was carried out. The nonuniform distribution of point defects responsible for impurity diffusion has been taken into account.